Categories
Featured

Scientists inch closer to holy grail of memory breakthrough — producing tech that combines NAND and RAM features could be much cheaper to produce and consume far less power

[ad_1]

A revolutionary new memory device that combines the features of DRAM and NAND flash memory is being developed by a group of researchers at the Korea Advanced Institute of Science and Technology (KAIST). 

Led by Professor Shinhyun Choi of the School of Electrical Engineering, the team’s breakthrough promises cheaper, power-efficient solutions that could potentially replace existing memory solutions or be used to implement neuromorphic computing for the next-generation of AI hardware.

[ad_2]

Source Article Link

By lisa nichols

Passionate about the power of words and their ability to inform, inspire, and ignite change, lisa Nichols is an accomplished article writer with a flair for crafting engaging and informative content. With a deep curiosity for various subjects and a dedication to thorough research, lisa Nichols brings a unique blend of creativity and accuracy to every piece

Leave a Reply

Your email address will not be published. Required fields are marked *